BTA16-XXXSW btb16-xxxsw ? september 1998 - ed: 3b high performance logic level triacs to220ab i t(rms) = 16a logic level triggering: i gt 10ma high surge capability features the bta/btb16-xxxsw triacs are using a high performance glass passivated technology. these triacs are designed for applications requiring high inrush current performances such as fridge motor control, magnetron supply of microwave ovens, halogen range cookers, etc...). the high gate sen- sitivity makes them perfectly suited for direct gate triggering by microcontrollers and other logic cir- cuits. description a2 a1 g symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 85 c16 a btb tc = 105 c i tsm non repetitive surge peak on-state current ( tj initial = 25 c ) tp = 8.3 ms 170 a tp = 10 ms 160 i 2 t i 2 t value for fusing tp = 10 ms 128 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 20ma , tr 100ns repetitive f = 100 hz 50 a/ m s tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 125 c c tl maximum lead temperature for soldering during 10s at 4.5mm from case 260 c absolute maximum ratings symbol parameter bta / btb16-xxxsw unit 600 700 v drm v rrm repetitive peak off-state voltage tj = 125 c 600 700 v 1/5
p g (av) = 1w p gm = 10w (tp = 20 m s) i gm = 4a (tp = 20 m s). gate characteristics (maximum values) symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc bta 2.8 c/w btb 1.6 rth (j-c) ac junction to case for ac 360 conduction angle ( f= 50 hz) bta 2.1 c/w btb 1.2 thermal resistances symbol test conditions quadrant bta/btb16-xxxsw unit value i gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 10 ma v gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 1.3 v v gd v d =v drm r l =3.3k w tj=125 c i-ii-iii min 0.2 v i l i g =1.2 i gt tj=25 c i-iii max 30 ma ii max 40 i h * i t = 100ma gate open tj=25 c max 15 ma v tm * i tm = 22.5a tp= 380 m s tj=25 c max 1.5 v i drm i rrm v d = v drm v r = v rrm tj=25 c max 5 m a tj=125 c max 2 ma dv/dt * v d =67%v drm gate open tj=125 c min 20 v/ m s (di/dt)c * (dv/dt)c = 0.1v/ m s tj=125 c min 3.5 a/ms without snubber tj=125 c min 1 * for either polarity of electrode a 2 voltage with reference to electrode a 1 . electrical characteristics ordering information btb 16 - 600 s w triac : btb : uninsulated bta : insulated current 3 quadrants voltage sensitivity bta/btb16-xxxsw 2/5
0246810121416 0 5 10 15 20 p(w) a = 60 a = 90 a = 30 a = 120 a = 180 i (a) t(rms) 180 a a fig.1 : maximum power dissipation versus rms on-state current (resistive load). 0 20 40 60 80 100 120 140 0 5 10 15 20 p(w) tcase (c) a =180 rth=0 c/w rth=1 c/w rth=2 c/w rth=4 c/w 85 125 105 115 95 tamb(c) fig.2-1 : correlation between maximum power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances (bta). 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 bta btb i (a) t(rms) tcase(c) a =180 fig.3 : rms on-state current versus case temperature. k=[zth/rth] 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-c) zth(j-a) tp(s) fig.4 : relative variation of thermal impedance versus pulse duration. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 i ,i [tj]/i ,i [tj=25c] gt h gt h i gt i h tj(c) fig.5 : relative variation of gate trigger current and holding current versus junction temperature (typical values). 0 20 40 60 80 100 120 140 0 5 10 15 20 rth=0 c/w rth=1 c/w rth=2 c/w rth=4 c/w 105 125 115 p(w) tcase (c) tamb(c) a =180 fig.2-2 : correlation between maximum power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (btb). bta/btb16-xxxsw 3/5
12 510 100 200 500 1000 tp(ms) i (a),i2t(a2s) tsm tj initial=25c i tsm i2t fig 7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 200 i (a) tm tj=25c tj max.: vto=0.85v rt=25m w tj=tj max. v (v) tm fig.8 : on-state characteristics (maximum values). 1 10 100 1000 0 20 40 60 80 100 120 140 i (a) tsm tj initial=25c f=50hz number of cycles fig.6 : non repetitive surge peak on-state current versus number of cycles. bta/btb16-xxxsw 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com package mechanical data to220ab plastic m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.50 4.20 0.137 0.165 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 16.40 0.646 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 type marking bta16-600sw bta16 600sw bta16-700sw bta16 700sw btb16-600sw btb16 600sw btb16-700sw btb16 700sw weight : 2.1g marking bta/btb16-xxxsw 5/5
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